• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    A method for structuring an object comprises applying a substrate 13 in a working area of a first particle beam column and a second particle beam column; producing a desired target structure on the substrate by directing a particle beam produced by the first particle beam column at a plurality of locations of the substrate to separate or remove material therefrom; interrupting the production of the desired target structure and producing a marking 911, 912, ... on the substrate several times by directing the first particle beam at the substrate and continuing to produce the desired target structure; and determining positions of the markings on the substrate by directing a second particle beam produced by the second particle beam column onto the marks on the substrate and detecting particles or radiation, which is thereby directed onto the substrate by the second particle beam. are being produced. Beam deflections of the first particle beam to be produced by the first particle beam column are determined in dependence on the determined positions of the markings such that this particle beam is directed at the plurality of locations of the substrate.
    公开号:NL2018477A
    申请号:NL2018477
    申请日:2017-03-07
    公开日:2017-09-19
    发明作者:Biberger Josef；Salzer Roland
    申请人:Zeiss Carl Microscopy Gmbh；
    IPC主号:
    专利说明:

    NLP201133A
    Methods for structuring an object and particle beam system for this
    The invention relates to methods for structuring an object with the aid of a particle beam system, which comprises two particle beam columns, such as, for example, an ion beam column and an electron beam column, and a particle beam system therefor.
    A particle beam system, which comprises two particle beam columns, the particle beams of which can be directed to an object in a common working area, is traditionally used for structuring the object. Here, a particle beam, for example an ion beam or an electron beam, is used to form the structures of the object, while the other particle beam, for example an electron beam from an electron beam microscope, is used to monitor the process of structuring the object. Structuring the object takes place by separating material on the object or by removing material from the object, because the particle beam used for this is directed at a plurality of locations of the object. The separation of material on the object or the removal of material from the object can be supported by supplying a process gas. An example of a process in which an ion beam is used for structuring an object is the production of a so-called TEM lamella, that is, cutting a substrate suitable for examination with a transmission electron beam microscope, such as a sample manufacturing semiconductor wafer.
    Such processes for structuring an object with a particle beam can take a few minutes, a few tens of minutes or even hours. During this time, shifts with respect to the locations at which the particle beam strikes the object may occur, which shifts adversely affect the accuracy and reproducibility of the fabricated structures. The shifts may be caused by temperature changes and changes in the high voltage used for the operation of the particle beam column or the like.
    Even when the progress of structuring the object with a particle beam column is monitored by the other particle beam column and the progress of structuring is carried out in dependence on this monitoring, the highest possible precision can not be achieved, since the position of the both particle beam columns are subject to a mechanical drift relative to each other and not all structures produced with one particle beam column can be optimally monitored by the other particle beam column, since the particle rays produced by the two particle beam columns strike the object at different angles.
    It is therefore an object of the present invention to propose a method for structuring an object that allows a higher precision.
    Embodiments of the invention propose a method for structuring an object using a particle beam system comprising two particle beam columns, the one particle beam column being used to produce a desired target structure by separating material or removing material and repeatedly producing a mark on the substrate during this production of the desired target structure, and the other particle beam column is used to determine the position of a newly produced mark and / or the positions of pre-produced markings. Further production of the desired target structure can then be carried out on the basis of these determined positions.
    Since the markings are produced by the same particle beam, which also produces the desired target structure, shifts occurring in this particle beam column during the possibly lengthy process of producing the desired target structure can be recognized and corrected. A shift in the particle beam column, the one used for monitoring, or a shift in the mechanical positioning of the two particle beam columns relative to each other has a slight influence on this method, since the positions of the markers can be determined in a very short time and the positions thereof relative to each other can be precisely determined independently of such shifts.
    According to embodiments of the invention, a method for structuring an object comprises: applying a substrate in a working area of a first particle beam column and a second particle beam column; producing a desired target structure of the substrate by directing a particle beam produced by the first particle beam column to a plurality of locations of the substrate to separate or remove material therefrom; intermittently interrupting the production of the desired target structure and producing a mark on the substrate by directing the first particle beam onto the substrate and continuing to produce the desired target structure; and determining positions of the markings on the substrate by directing a second particle beam produced by the second particle beam column onto the markings on the substrate and detecting particles or radiation which are thereby applied to the substrate by the second particle beam. is being produced; wherein beam deflections of the first particle beam to be produced by the first particle beam column are determined in dependence on the determined positions of the markings such that the first particle beam is directed at the plurality of locations of the substrate.
    The separation of material on the object resp. material removal from the object takes place at any time at the location of the substrate to which the first particle beam has just been directed. These locations and their temporal order are determined by the geometry of the desired target structure and may, for example, be predetermined. To strike the substrate at a desired location, the first particle beam must be deflected appropriately by the first particle beam column. The particle beam can in this case reside at any desired location for a certain period of time and can move rapidly from any desired location to the respective next desired location. to jump. Furthermore, the particle beam can be moved over the desired places by continuous deflection. For example, a control of the particle beam column may include a table or a calculation rule that sets a relationship between coordinates of locations of the substrate and beam deflections that are to be produced to direct the first particle beam to the respective locations. The beam deflections can be represented here by, for example, control voltages or control currents or other control signals, which are supplied to beam deflectors of the first particle beam column. A shift occurring in the first particle beam column or in the positioning of the substrate relative to the first particle beam column results in the beam deflections, which must be produced, in order for the first particle beam to hit desired locations of the object to be corrected in order to compensate for the shift. Such corrections of already determined desired beam deflections or directly determined beam deflections can be determined taking into account the determined positions of the markings, for example to compensate for shifts.
    According to exemplary embodiments, the desired target structure has a three-dimensional structure. This means that the target structure extends not only two-dimensionally in one plane, but in three-dimensional space. According to exemplary embodiments, the desired target structure has two surface regions, the surface normal of which have orientations which differ from one another by more than 5 °, in particular by more than 10 ° and in particular by more than 15 °.
    According to exemplary embodiments, the method further comprises producing a marker on the substrate prior to starting producing the desired target structure. As a result, shifts occurring between the start of producing the desired target structure and the first interruption of producing the desired target structure and producing the marking on the substrate can be detected.
    According to exemplary embodiments, the markings in a surface area of the substrate are produced side by side, with orientations of surface normalities of this surface area being less than 5 °, in particular less than 1 ° and in particular less than 0.1 ° differ from each other. This means that the markings as a whole on the substrate have a two-dimensional structure, such that distances between individual markings and thereby their positions can be determined by the second particle beam with relatively great accuracy, even when this particle beam hits the substrate at an angle which differs from the angle at which the first particle beam strikes the substrate.
    According to exemplary embodiments, the method further comprises separating a metal layer in a surface region of the substrate, thereby producing the markings in the metal layer. A particularly thin metal layer can be quickly removed by the first particle beam to produce the marker, which then provides a high contrast in determining its position with the second particle beam column.
    According to exemplary embodiments, the markers each comprise a straight line or two intersecting straight lines. This makes it possible to easily establish distances between different markings by scanning them with the second particle beam.
    According to exemplary embodiments, a main axis of the first particle blasting device and a main axis of the second particle blasting device are oriented with respect to each other by more than 10 °, in particular more than 20 ° and in particular more than 30 °. The first particle beam can be an ion beam, in particular a gallium ion beam, and the second particle beam can be an electron beam, the second particle beam column being the particle beam column of an electron microscope.
    According to exemplary embodiments, the method further comprises determining a current shape of the target structure in production by directing the second particle beam at an area of the substrate in which the target structure is produced, and detecting particles or radiation, which is thereby produced by the second particle beam on the substrate, the beam deflections of the first particle beam to be produced by the first particle beam column being furthermore determined in dependence on the determined instantaneous shape of the target structure in production that the first particle beam is directed at the plurality of locations of the substrate.
    This makes it possible to monitor the formation of the desired target structure and, for example, to compensate for shifts in the speed at which the material is deposited on the substrate, or the speed at which the material is removed from the substrate, which, for example, by a change of the jet stream of the first particle jet or a change in the pressure of a used process gas.
    Embodiments of the invention are explained below with reference to figures. Hereby shows:
    Figure 1 shows a particle beam system with two particle beam columns;
    Figure 2 shows a state of a substrate during the production of a desired target structure of the substrate for explaining an embodiment of a method for structuring an object; and
    Figure 3 shows an arrangement of markings which can be used in an embodiment of the method for structuring the object.
    Figure 1 shows in a perspective and schematically simplified representation a particle beam system 1 with two particle beam columns, wherein a first particle beam column 7 is the particle beam column of an ion beam system with a main axis 9 and a second particle beam column 3 is the particle beam column of an electron microscopy system with a main axis 5.
    The main axes 5 and 9 of the electron microscopy system 3 and 4, respectively. of the ion beam system 7 intersect at a location 11 in a common working area of the two particle beam columns 3, 7 at an angle α, which may have values from, for example, 45 ° to 55 °, so that an object 13 to be structured with a surface 15 in a region of the location 11 can be processed both with an ion beam 17 transmitted along the main axis 9 of the ion beam system 7 and with an electron beam 19 transmitted along the main axis 5 of the electron microscopy system 3. For holding the object a schematically indicated holder 16 is provided, which object 13 with regard to the distance to and the orientation with respect to the electron microscopy system and the like. the ion beam system.
    For this purpose, the electron microscopy system 3 for the production of the primary electron beam 19 comprises an electron source 21, which is shown schematically by means of a cathode 23 and an anode 27 and a suppression electrode 25 arranged therebetween and a extracting electrode 26 arranged therebetween. Furthermore, the electron microscopy system 3 comprises an acceleration electrode 27, which passes into a nozzle 29 and passes through a collimator device 31, which is shown schematically by means of a ring coil 33 and a yoke 35. After traversing the collimator device 31, the primary electron beam passes through an aperture diaphragm 37 and a central aperture 39 in a secondary electron detector 41, whereafter the primary electron beam 19 enters an objective lens 43 of the electron microscopy system 3. For focusing the primary electron beam 19, the objective lens 43 comprises a magnetic lens 45 and an electrostatic lens 47. In the schematic representation of Figure 1, the magnetic lens 45 comprises a ring coil 49, an inner pole shoe 51 and an outer pole shoe 53 The electrostatic lens 47 is formed by a lower end 55 of the nozzle 29, the inner lower end of the outer pole shoe 53 and a ring electrode 59 narrowing conically towards position 11 on the sample. The objective lens 43, which is shown diagrammatically in Figure 1, can have a construction as shown in more detail in US 6,855,938.
    The ion beam system 7 comprises an ion source 63 with extracting electrode 65, a collimator 67, a diaphragm 69, deflection electrodes 71 and focusing lenses 73 for the production of the ion beam 17 emerging from a housing 75 of the ion beam system 7. The longitudinal axis 9 'of the holder 16 is at an angle with respect to the vertical 5 ', which in this example corresponds to the angle α between the directions 5 and 9 of the particle rays. However, the directions 5 'and 9' need not coincide with the directions 5 and 9 of the particle jets and also the angle enclosed by them need not correspond to the angle α between the particle beams.
    The particle beam system 1 further comprises a controller 77 which controls the operation of the particle beam system 1. In particular, the controller 77 controls the switching on and off of the electron beam 19 and the ion beam 17 and beam deflectors 71 of the ion beam column 7 and beam deflectors (not shown in Figure 1) of the electron beam column 3, about the particle rays relative to the main axes 9 5 of the ion beam column 7 resp. deflecting from the electron beam column 3 to direct the rays onto the object 13 at selectable locations within the common operating area. The control is programmable and can carry out a method for structuring the object 13 explained below with reference to Figure 2.
    The object 13 is, for example, a semiconductor substrate, into which structures are introduced by means of lithographic steps during manufacture, which components form electronic circuits. It is believed that these structures should be examined with the aid of a transmission electron microscope. For this purpose, it is necessary to take a material sample at a desired location of the substrate, which sample is suitable for examination with a transmission electron microscope. Such a sample, which is also referred to as a TEM slat, is produced by cutting a thin, square plate with a thickness of, for example, 100 nm or less from the volume of the substrate and then by removing material on the flat sides. of the plate, for example with a further particle beam, is made even thinner. The processing steps required for this, which essentially comprise the removal of material from the substrate 13, are carried out by means of ion beam etching, in that the ion beam 17 produced by the ion beam column 7 is directed at selectable locations of the substrate 13 such that the thin plate 81 is cut from the substrate 13. A micromanipulator can then be used to remove the thin plate 81 from the substrate, perform further processing steps, and finally apply it to a sample holder of the transmission electron microscope.
    Figure 2 shows an intermediate stage during the cutting-out of the thin plate 81 from the substrate 13 with the ion beam 17. The thin plate 81 is partially cut loose at this intermediate stage, because starting from a surface 83 of the substrate 13 on both sides of the thin plate 81 slots 85 are produced by removing material from the substrate 13 using the ion beam 17. At the intermediate stage shown in Fig. 2, the thin plate 81 is still at its ends and at the bottom of the slots 85 with the remainder of the substrate 13. These material connections can later be broken through with the ion beam, so that the thin plate 81 is completely cut loose and can be grasped with the micromanipulator and removed from the substrate 13. At the intermediate stage shown in Figure 2, the slots 85 and the thin plate 81 disposed between these slots and connected to its front ends and to the bottom of the slots with the substrate 13 form a desired target structure in the method for structuring the object 13. This target structure has a three-dimensional extension in that the extension of the thin plate 81 in an x-direction is, for example, 10 µm, the depth of the tombs 85 in a z-direction is, for example, 5 µm and the slots 85 on the surface 83 of the substrate 13 in a y direction each have a width of, for example, 8 µm. The three-dimensional structure of the target structure is also apparent in that normal vectors 87 on surfaces of the target structure, such as, for example, on the walls of the slots 85 and the surfaces of the thin plate 81 with respect to each other, more than 5 °, in particular of more than 10 ° and in particular of more than 15 °.
    Manufacturing the target structure shown in Figure 2 by removing material from the substrate 13 by means of the ion beam takes a considerable time, such as, for example, 30 minutes. Since the thickness of the thin plate 81 of, for example, 100 nm or less is very small, it must be ensured that the ion beam can be directed with corresponding accuracy to the planned locations on the substrate, so as not to, for example, erroneous material of the thin plate 81 and thereby render this plate unusable. Inevitably occurring shifts during the operation of the ion beam column 7 and the holder holding the substrate 13 relative to the ion beam column 7 make it difficult to maintain this desired precision. For example, such inevitably occurring shifts can change the target of the ion beam on the object over a 5-minute period by 100 nm.
    On this basis, the method for structuring the substrate 13 provides for interrupting the process of producing the desired target structure time and again and producing markings with the ion beam 17 in a surface area 89 adjacent to the target structure. These marks are then examined with the electron beam microscope 3 in that the electron beam microscope 3 acquires, for example, an electron microscopic image of the surface area 89. From this electron microscopic image, positions of the markers relative to each other can be determined, and then the further process of producing the desired target structure can be controlled based on the determined positions of the markers.
    Before starting the process for producing the desired target structure, a thin metallization layer on the surface 83 of the substrate 13 can be deposited in the surface area 89. The separation of the metal for the metallization layer in the surface region 89 can again be produced by the ion beam 17, by being systematically directed at locations within the surface region 89 with simultaneous supply of a process gas. The process gas can be, for example, CsHigPt, which is activated by the ion beam and leads to separation of the metal platinum (Pt) at the instantaneous location of the substrate 13 being hit by the ion beam. The metallization layer may, for example, have a thickness of 50 nm.
    After manufacturing the metallization layer in the surface area 89, a first marking 91o is provided in the metallization layer, which has the appearance of an elongated line extending in the x direction. The mark 91o is produced with the aid of the ion beam.
    Thereafter, the process for producing the desired target structure on the substrate 13 is started. After a duration of, for example, 2 minutes, which is short compared to the total duration of the process of producing the desired target structure, the process of producing the desired target structure is interrupted, and the ion beam in the surface area 89 produced a marker 91i which, in the example shown in Figure 2, is a short line extending in the x direction and spaced apart from the marker 910. At this time, the two marks 910 and 91i are provided in the surface area 89. An electron microscope image of the surface area 89 is then acquired with the electron microscope 3, and the positions of the two marks 910 and 91i in the image are determined. In particular, the actual distance 11 in the y direction between the two marks 910 and 91i can be determined. This distance is determined in the coordinate system of the electron beam microscope 3. However, the marks 910 and 91] were produced by deflecting the ion beam in the coordinate system of the ion beam column 7. By analyzing the electron microscopic image, it is thus possible to check the positions of the markers 91q and 91i relative to each other with a system that is independent of the system with which the markings are produced. Therefore, if the measured mutual distance 11 of the two markings differs from a desired distance that follows from the beam deflections of the ion beam 17 when imaging the markings, then the deflections of the desired target structure used in the further process of producing the desired target structure can ion beam 17 can be corrected accordingly.
    In the analysis of the electron microscopic image, only the positions of the markers relative to each other are analyzed here, not the positions of the markers relative to a respective reference point in the image, such as, for example, the respective center point of the electron microscopic images. However, since shifts in the electron beam microscope only affect the positions of fixed reference points, such as, for example, the centers, of the electron microscope images, they cannot lead to an indefinite change in the magnification of the electron microscope image, so analysis of the relative positions of the markings Shifts occurring in the electron-microscopic image in the ion beam column are reliably determined, without the measurement values thus determined being distorted by shifts in the electron beam microscope.
    Considering such a correction, the method for producing the desired target structure is then continued by further removing material in the region of the slots 85 from the substrate with the ion beam 17. After, for example, a further 2 minutes, the process of producing the desired target structure is interrupted again, and a further mark 912 is provided in the surface area 89, which is equal to the mark 91i and extends as a short line in the x direction, however, has a distance 12 from the mark 91o. Again, an electron microscopic image of the surface area 89 is acquired, from which the positions of the markers 91 0 and 912 are determined, with a current correction for beam deflections of the ion beam for the ion beam from the distance 12 between the last applied mark 912 and the first applied mark 910 further process of producing the desired target structure can be acquired. This process of producing the desired target structure is then continued and repeatedly interrupted several times to provide a new marker in the surface area 89 and to determine from the position of a again updated correction for deflections of the ion beam in the further process .
    At the intermediate stage shown in Figure 2, further marks 913, 914, 915 and 916 were provided in the surface area 89, the mark 916 being the last mark applied.
    In Figure 2, the desired structure to be produced is the thin plate 81, which later becomes a TEM slat and which extends in the x-direction, wherein it must be very thin in the y-direction. It is therefore particularly important to be able to perform the positioning of the ion beam in the y-direction very accurately. Based on this, the marks 910, 91i, ... are each straight lines that extend in the x direction, so that the positions of the marks relative to each other in the y direction can be determined very accurately. However, it is also possible to use other forms of marking. An example of this is shown in Figure 3, in which the shape of each marker is a cross, which makes it easier to determine positions of the markers relative to each other in two independent directions (x, y). Other shapes can be used for the marking.
    In the example explained with reference to Figure 2, the distance 11, 12, ... at which markings 91i, 912, ... from the first applied mark 910 are applied increases uniformly. However, this is not necessary. If the process for producing the desired target structure is interrupted, the newly produced marking can in principle be produced at any location on the surface area 89, provided that it is ensured that the last marking applied is in the middle of the already existing markings. can be identified.
    In the exemplary embodiment explained above, the two slots 85 are manufactured simultaneously on both sides of the plate 81, such as that they are manufactured in several cycles, one cycle of removing material from one of the two slots and arranging comprises a further marking 91. The two slots can, however, also be produced one after the other, in that first one slot is produced, in that material is removed from this slot in several cycles and a further marking is produced until the first slot is produced substantially completely, whereafter the second slot is produced. slot is manufactured in a similar manner. Two separate metallization layers, spatially separated from each other, can be provided here, one metallization layer being assigned to a slot, during the manufacture of which markings are provided in this metallization layer.
    权利要求:
    Claims (12)
    [1]
    A method of structuring an object, the method comprising: applying a substrate in a working area of a first particle beam column and a second particle beam column; producing a desired target structure of the substrate by directing a particle beam produced by the first particle beam column to a plurality of locations of the substrate to separate or remove material therefrom; intermittently interrupting the production of the desired target structure and producing a mark on the substrate by directing the first particle beam onto the substrate and continuing to produce the desired target structure; and determining positions of the markings on the substrate by directing a second particle beam produced by the second particle beam column onto the markings on the substrate and detecting particles or radiation which are thereby applied to the substrate by the second particle beam. is being produced; wherein beam deflections of the first particle beam to be produced by the first particle beam column are determined in dependence on the determined positions of the markings such that the first particle beam is directed at the plurality of locations of the substrate.
    [2]
    Method according to claim 1, wherein the desired target structure comprises two surface areas, the surface normalities of which have orientations that differ from one another by more than 5 °, in particular by more than 10 ° and in particular by more than 15 °.
    [3]
    The method of claim 1 or 2, further comprising producing a marker on the substrate prior to starting producing the desired target structure.
    [4]
    Method according to one of claims 1 to 3, wherein the markings in a surface area of the substrate are produced side by side, with orientations with less than 5 °, in particular with less than 1 ° and in particular with less differ by more than 0.1 °.
    [5]
    The method of any one of claims 1 to 4, further comprising separating a metal layer in a surface region of the substrate, wherein the markings are produced in the metal layer.
    [6]
    The method of any one of claims 1 to 5, wherein the markers each comprise a straight line or two straight lines intersecting each other.
    [7]
    Method according to one of claims 1 to 6, wherein a main axis of the first particle blasting device and a main axis of the second particle blasting device at an angle of more than 10 °, in particular of more than 20 ° and in particular of more than 30 ° with respect to each other.
    [8]
    The method of any one of claims 1 to 7, wherein determining positions of the marks on the substrate comprises determining a mutual distance of at least one pair of marks.
    [9]
    The method of any one of claims 1 to 8, further comprising determining a current shape of the target structure in production by directing the second particle beam to an area of the substrate in which the target structure is and detecting particles or radiation thereby produced on the substrate by the second particle beam, the beam deflections of the first particle beam to be produced by the first particle beam column further being dependent on the determined instantaneous shape of the target structure are determined to be directed to the plurality of locations of the substrate.
    [10]
    The method according to any of claims 1 to 9, wherein the first particle beam produced by the first particle beam column is an ion beam, in particular a gallium ion beam, and the second particle beam produced by the second particle beam column is an electron beam.
    [11]
    The method of any one of claims 1 to 10, wherein the object is a TEM slat.
    [12]
    A particle beam system comprising a first particle beam column, a second particle beam column and a control, wherein the control is adapted to control the particle beam system such that it performs the method according to one of claims 1 to 11.
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    法律状态:
    优先权:
    申请号 | 申请日 | 专利标题
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